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PMF3800SN
N-channel TrenchMOS standard level FET
Rev. 02 -- 1 July 2005 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.2 Features
s Logic level compatible s Very fast switching s Subminiature surface-mounted package s Gate-source ESD protection diodes
1.3 Applications
s Relay driver s High-speed line driver
1.4 Quick reference data
s VDS 60 V s RDSon 4.5 s ID 260 mA s Ptot 0.56 W
2. Pinning information
Table 1: Pin 1 2 3 Pinning Description gate (G) source (S) drain (D)
G
Simplified outline
3
Symbol
D
1
2
SOT323 (SC-70)
S
03ab60
Philips Semiconductors
PMF3800SN
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2: Ordering information Package Name PMF3800SN SC-70 Description plastic surface mounted package; 3 leads Version SOT323 Type number
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM Vesd drain-source voltage drain-gate voltage (DC) gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source (diode forward) current Tsp = 25 C Tsp = 25 C; VGS = 10 V; Figure 2 and 3 Tsp = 100 C; VGS = 10 V; Figure 2 Tsp = 25 C; pulsed; tp 10 s; Figure 3 Tsp = 25 C; Figure 1 Conditions 25 C Tj 150 C 25 C Tj 150 C; RGS = 20 k Min -55 -55 Max 60 60 15 260 165 560 0.56 +150 +150 280 560 1 Unit V V V mA mA mA W C C mA mA kV
Source-drain diode peak source (diode forward) current Tsp = 25 C; pulsed; tp 10 s electrostatic discharge voltage Human body model 1; C = 100 pF; R = 1.5 k
Electrostatic discharge voltage
9397 750 15218
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 -- 1 July 2005
2 of 12
Philips Semiconductors
PMF3800SN
N-channel TrenchMOS standard level FET
120 Pder (%) 80
03aa17
120 Ider (%) 80
03aa25
40
40
0 0 50 100 150 Tsp (C) 200
0 0 50 100 150 Tsp (C) 200
P tot P der = ------------------------ x 100 % P
tot ( 25 C )
ID I der = -------------------- x 100 % I
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of solder point temperature
1 Limit RDSon = VDS / ID ID (A) 10-1
Fig 2. Normalized continuous drain current as a function of solder point temperature
03ap26
tp = 10 s 100 s
1 ms 10 ms DC 100 ms
10-2
10-3 1 10 VDS (V)
102
Tsp = 25 C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9397 750 15218
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 -- 1 July 2005
3 of 12
Philips Semiconductors
PMF3800SN
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4: Rth(j-sp) Thermal characteristics Conditions Figure 4 Min Typ Max 220 Unit K/W thermal resistance from junction to solder point Symbol Parameter
103 Zth(j-sp) (K/W) 102 = 0.5 0.2 0.1 0.05 0.02 10 single pulse
03ap25
P
=
tp T
tp T
t
1 10-4
10-3
10-2
10-1
1 tp (s)
10
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
9397 750 15218
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 -- 1 July 2005
4 of 12
Philips Semiconductors
PMF3800SN
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5: Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage ID = 10 A; VGS = 0 V Tj = 25 C Tj = -55 C V(BR)GSS gate-source breakdown voltage VGS(th) gate-source threshold voltage IG = 1 mA; VDS = 0 V ID = 1 mA; VDS = VGS; Figure 9 and 10 Tj = 25 C Tj = 150 C Tj = -55 C IDSS drain leakage current VDS = 48 V; VGS = 0 V Tj = 25 C Tj = 150 C IGSS RDSon gate leakage current drain-source on-state resistance VGS = 10 V; VDS = 0 V VGS = 10 V; ID = 500 mA; Figure 6 and 8 Tj = 25 C Tj = 150 C VGS = 4.5 V; ID = 200 mA; Figure 6 and 8 Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss ton toff VSD trr Qr total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on time turn-off time VDS = 50 V; RL = 250 ; VGS = 10 V; RG = 50 ; RGS = 50 VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 13 ID = 0.5 A; VDS = 48 V; VGS = 10 V; Figure 11 0.85 0.55 0.07 13 8 4 3 9 0.93 30 30 40 30 10 1.5 nC nC nC pF pF pF ns ns V ns nC 2.8 5.2 3.8 4.5 8.4 5.3 m m m 50 1 10 500 A A nA 1 0.6 2 3.5 V V V 60 55 16 22 V V V Conditions Min Typ Max Unit
Source-drain diode source-drain (diode forward) voltage IS = 300 mA; VGS = 0 V; Figure 12 reverse recovery time recovered charge IS = 300 mA; dIS/dt = -100 A/s; VGS = 0 V; VR = 25 V
9397 750 15218
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 -- 1 July 2005
5 of 12
Philips Semiconductors
PMF3800SN
N-channel TrenchMOS standard level FET
0.5 ID (A) 0.4 Tj = 25 C VGS (V) = 10 6
03an70
10 RDSon () 8
03an71
VGS (V) = 3.5
Tj = 25 C
4.5
4 6 4.5 6 10
0.3
4
0.2
3.5
4
0.1
3
2
0 0 0.5 1 1.5 VDS (V) 2
0 0 0.1 0.2 0.3 0.4 ID (A) 0.5
Tj = 25 C
Tj = 25 C
Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values
0.5 ID (A) 0.4
03an72
Fig 6. Drain-source on-state resistance as a function of drain current; typical values
2.4 a 1.8
03aa28
VDS > ID x RDSon
0.3 1.2 0.2 0.6 0.1 150 C Tj = 25 C 0 -60
0 0 2 4 VGS (V) 6
0
60
120
Tj (C)
180
Tj = 25 C and 150 C; VDS > ID x RDSon
R DSon a = ----------------------------R DSon ( 25 C ) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature
Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values
9397 750 15218
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 -- 1 July 2005
6 of 12
Philips Semiconductors
PMF3800SN
N-channel TrenchMOS standard level FET
2.4 VGS(th) (V) typ 1.8
03aa34
10-1 ID (A) 10-2
03aa37
10-3 1.2 min 10-4 min typ
0.6 10-5
0 -60
10-6 0 60 120 Tj (C) 180 0 0.6 1.2 1.8 VGS (V) 2.4
ID = 1 mA; VDS = VGS
Tj = 25 C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of junction temperature
15 VGS (V) 10
Fig 10. Sub-threshold drain current as a function of gate-source voltage
03ab09
5
0 0 0.3 0.6 0.9 QG (nC) 1.2
ID = 0.5 A; VDS = 48 V
Fig 11. Gate-source voltage as a function of gate charge; typical values
9397 750 15218
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 -- 1 July 2005
7 of 12
Philips Semiconductors
PMF3800SN
N-channel TrenchMOS standard level FET
0.5 IS (A) 0.4 VGS = 0 V
03an73
102
03aa46
C (pF) Ciss 10
0.3
0.2 150 C 0.1 Tj = 25 C
Coss
Crss
0 0 0.3 0.6 0.9 VSD (V) 1.2
1 10-1
1
10
VDS (V)
102
Tj = 25 C and 150 C; VGS = 0 V
VGS = 0 V; f = 1 MHz
Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
9397 750 15218
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 -- 1 July 2005
8 of 12
Philips Semiconductors
PMF3800SN
N-channel TrenchMOS standard level FET
7. Package outline
Plastic surface mounted package; 3 leads SOT323
D
B
E
A
X
y
HE
vMA
3
Q
A
A1 c
1
e1 e bp
2
wM B Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2
OUTLINE VERSION SOT323
REFERENCES IEC JEDEC JEITA SC-70
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 04-11-04
Fig 14. Package outline SOT323 (SC-70)
9397 750 15218 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 -- 1 July 2005
9 of 12
Philips Semiconductors
PMF3800SN
N-channel TrenchMOS standard level FET
8. Revision history
Table 6: Revision history Release date 20050701 Data sheet status Change notice Doc. number 9397 750 15218 9397 750 14255 Supersedes PMF3800SN_1 Product data sheet Product data sheet Document ID PMF3800SN_2 Modifications: PMF3800SN_1
*
Table 5 "Characteristics": Addition of QG data to table.
20050208
9397 750 15218
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 -- 1 July 2005
10 of 12
Philips Semiconductors
PMF3800SN
N-channel TrenchMOS standard level FET
9. Data sheet status
Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
III
Product data
Production
[1] [2] [3]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
10. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
12. Trademarks
Notice -- All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS -- is a trademark of Koninklijke Philips Electronics N.V.
11. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 15218
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 -- 1 July 2005
11 of 12
Philips Semiconductors
PMF3800SN
N-channel TrenchMOS standard level FET
14. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information . . . . . . . . . . . . . . . . . . . . 11
(c) Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 1 July 2005 Document number: 9397 750 15218
Published in The Netherlands

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